Rpsc Assistant Professor Previous Question Paper Download Pdf All Subject

Download Rpsc Assistant Professor Previous Year Papers Pdfs Solutions The total energy of mn doped bi2se3 without strain is set as zero, namely the energies of mn doped bi2se3 with strains are given relative to the case without strain. Abstract we report the observation of quantum hall effect (qhe) in a bi 2 se 3 single crystal having carrier concentration (n) ∼ 1.13 × 10 19 cm −3, three dimensional fermi surface and bulk transport characteristics. the plateaus in hall resistivity coincide with minima of shubnikov de haas oscillations in resistivity.

Download Rpsc Assistant Professor Previous Year Papers Pdfs Solutions We discuss the possibility of realizing weyl semimetal phase in the magnetically doped band topological insulators. the magnetic mass in the system could be supplied by magnetic cr or fe doping. when the magnetic moments are ferromagnetically polarized, we show that there are three phases in the system upon the competition between topological mass and magnetic mass: topological band. We theoretically investigated the possibility of establishing ferromagnetism in the topological insulator bi2se3 via magnetic doping of 3d transition metal elements. the formation energies, charge states, band struc tures, and magnetic properties of doped bi2se3 are studied using first principles calculations within density functional theory. our results show that bi substitutional sites are. To clarify this issue, we systematically investigate the stability, electronic, and magnetic properties of 3d transition metal (tm) elements v , cr , mn , and fe doped bi2se3, bi2te3, and sb2te3 using dft calculations and monte carlo simulations. we first assess the feasibility of magnetic doping in bi2se3, bi2te3, and sb2te3 under different growth environments according to formation energy. The quantized step size in 1 r (xy) is found to scale with the sample thickness, and average ~e (2) h per quintuple layer. we show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2d electron systems to give a multilayered quantum hall effect.

Rpsc Research Assistant Previous Year Paper Download Pdf To clarify this issue, we systematically investigate the stability, electronic, and magnetic properties of 3d transition metal (tm) elements v , cr , mn , and fe doped bi2se3, bi2te3, and sb2te3 using dft calculations and monte carlo simulations. we first assess the feasibility of magnetic doping in bi2se3, bi2te3, and sb2te3 under different growth environments according to formation energy. The quantized step size in 1 r (xy) is found to scale with the sample thickness, and average ~e (2) h per quintuple layer. we show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2d electron systems to give a multilayered quantum hall effect. In the magnetically doped bi 2 se 3 single crystals, arpes revealed that the opening of a surface band gap at the dirac point [10] owing to the breaking of trs by magnetic impurities. View a pdf of the paper titled stability, electronic and magnetic properties of magnetically doped topological insulators bi2se3, bi2te3 and sb2te3, by jian min zhang and 7 other authors. In this review article, the recent experimental and theoretical research progress in bi2se3 and bi2te3 based topolog ical insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. the electrical transport properties are discussed for a few different types of topo logical insulator. Both hall and seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of mn doping. we propose mn doped bi 2 se 3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.

Rpsc Assistant Professor Previous Question Paper Download Pdf All Subject In the magnetically doped bi 2 se 3 single crystals, arpes revealed that the opening of a surface band gap at the dirac point [10] owing to the breaking of trs by magnetic impurities. View a pdf of the paper titled stability, electronic and magnetic properties of magnetically doped topological insulators bi2se3, bi2te3 and sb2te3, by jian min zhang and 7 other authors. In this review article, the recent experimental and theoretical research progress in bi2se3 and bi2te3 based topolog ical insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. the electrical transport properties are discussed for a few different types of topo logical insulator. Both hall and seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of mn doping. we propose mn doped bi 2 se 3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.

Rpsc Assistant Professor Previous Questions Papers 12 Pdf In this review article, the recent experimental and theoretical research progress in bi2se3 and bi2te3 based topolog ical insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. the electrical transport properties are discussed for a few different types of topo logical insulator. Both hall and seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of mn doping. we propose mn doped bi 2 se 3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.